Semiconductors and Electronic Devices MCQ Questions & Answers in Modern Physics | Physics

Learn Semiconductors and Electronic Devices MCQ questions & answers in Modern Physics are available for students perparing for IIT-JEE, NEET, Engineering and Medical Enternace exam.

101. The manifestation of band structure in solids is due to

A Bohr’s correspondence principle
B Pauli’s exclusion principle
C Heisenberg’s uncertainty principle
D Boltzmann’s law
Answer :   Pauli’s exclusion principle

102. The $$I-V$$  characteristic of a $$P-N$$  junction diode is shown below. The approximate dynamic resistance of the $$p-n$$  junction when a forward bias of $$2$$ volt is applied is
Semiconductors and Electronic Devices mcq question image

A $$1\,\Omega $$
B $$0.25\,\Omega $$
C $$0.5\,\Omega $$
D $$5\,\Omega $$
Answer :   $$0.25\,\Omega $$

103. An $$NPN$$ -transistor circuit is arranged as shown in figure. It is
Semiconductors and Electronic Devices mcq question image

A a common base amplifier circuit
B a common emitter amplifier circuit
C a common collector amplifier circuit
D neither of the above
Answer :   a common emitter amplifier circuit

104. Sodium has body centred packing. Distance between two nearest atoms is $$3.7\,\mathop {\text{A}}\limits^ \circ .$$  The lattice parameter is

A $$6.8\,\mathop {\text{A}}\limits^ \circ $$
B $$4.3\,\mathop {\text{A}}\limits^ \circ $$
C $$3.0\,\mathop {\text{A}}\limits^ \circ $$
D $$8.6\,\mathop {\text{A}}\limits^ \circ $$
Answer :   $$4.3\,\mathop {\text{A}}\limits^ \circ $$

105. In a $$p-n$$  junction photo cell, the value of the photo-electromotive force produced by monochromatic light is proportional to

A the barrier voltage at the $$p-n$$  junction
B the intensity of the light falling on the cell
C the frequency of the light falling on the cell
D the voltage applied at the $$p-n$$  junction
Answer :   the intensity of the light falling on the cell

106. The following circuit represents
Semiconductors and Electronic Devices mcq question image

A OR gate
B XOR gate
C AND gate
D NAND gate
Answer :   XOR gate

107. A semiconducting device is connected in a series in circuit with a battery and a resistance. A current is allowed to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be

A a $$p$$ - $$n$$ junction
B an intrinsic semiconductor
C a $$p$$-type semiconductor
D an $$n$$-type semiconductor
Answer :   a $$p$$ - $$n$$ junction

108. By increasing the temperature, the specific resistance of a conductor and a semiconductor

A increases for both
B decreases for both
C increases, decreases
D decreases, increases
Answer :   increases, decreases

109. Radiowaves of constant amplitude can be generated with

A FET
B filter
C rectifier
D oscillator
Answer :   oscillator

110. The voltage gain of an amplifier with $$9\% $$ negative feedback is 10. The voltage gain without feedback will be

A 90
B 10
C 1.25
D 100
Answer :   100