Semiconductors and Electronic Devices MCQ Questions & Answers in Modern Physics | Physics
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101.
The manifestation of band structure in solids is due to
A
Bohr’s correspondence principle
B
Pauli’s exclusion principle
C
Heisenberg’s uncertainty principle
D
Boltzmann’s law
Answer :
Pauli’s exclusion principle
Pauli’s exclusion principle.
102.
The $$I-V$$ characteristic of a $$P-N$$ junction diode is shown below. The approximate dynamic resistance of the $$p-n$$ junction when a forward bias of $$2$$ volt is applied is
Neighbour distance of a body centred cubic cell $$d = \frac{{\sqrt 3 }}{2}a,$$ where $$a$$ is the lattice parameter.
$$\eqalign{
& \Rightarrow 3.7 = \frac{{\sqrt 3 a}}{2} \cr
& {\text{or}}\,\,a = \frac{{2 \times 3.7}}{{\sqrt 3 }} = 4.3\,\mathop {\text{A}}\limits^ \circ \cr} $$
105.
In a $$p-n$$ junction photo cell, the value of the photo-electromotive force produced by monochromatic light is proportional to
A
the barrier voltage at the $$p-n$$ junction
B
the intensity of the light falling on the cell
C
the frequency of the light falling on the cell
D
the voltage applied at the $$p-n$$ junction
Answer :
the intensity of the light falling on the cell
In a photoconductive cell, when monochromatic light is incident on the transparent metallic film, a force produced called the photo electromotive force, stimulates the emission of an electric current where photovoltaic action creates a potential difference between two points.
The magnitude of this current depends upon the intensity of incident light. Hence, photo electromotive force produced by monochromatic light is proportional to the intensity of light falling on the cell.
106.
The following circuit represents
A
OR gate
B
XOR gate
C
AND gate
D
NAND gate
Answer :
XOR gate
Output of upper AND gate $$ = \overline A B$$
Output of lower AND gate $$ = A\overline B $$
Thus, output of OR gate $$ = \overline A B + A\overline B $$
This is Boolean expression for XOR gate.
107.
A semiconducting device is connected in a series in circuit with a battery and a resistance. A current is allowed to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be
A
a $$p$$ - $$n$$ junction
B
an intrinsic semiconductor
C
a $$p$$-type semiconductor
D
an $$n$$-type semiconductor
Answer :
a $$p$$ - $$n$$ junction
We know that in forward biasing of $$p$$ - $$n$$ junction the current is of the order of milliampere while in reverse biasing the current is of the order of microampere (negligible). Thus, device is a $$p$$ - $$n$$ junction.
108.
By increasing the temperature, the specific resistance of a conductor and a semiconductor
A
increases for both
B
decreases for both
C
increases, decreases
D
decreases, increases
Answer :
increases, decreases
Specific resistance is resistivity which is given by $$\rho = \frac{m}{{n{e^2}\tau }}$$
where $$n$$ = no. of free electrons per unit volume
and $$\tau $$ = average relaxation time For a conductor with rise in temperature $$n$$ increases and $$\tau $$ decreases. But decrease in $$\tau $$ is more dominant than increase in $$n$$ resulting an increase in the value of $$\rho .$$ For a semiconductor with rise in temperature, $$n$$ increases and $$\tau $$ decreases. But the increase in $$n$$ is more dominant than decrease in $$\tau $$ resulting in a decrease in the value of $$\rho .$$
109.
Radiowaves of constant amplitude can be generated with
A
FET
B
filter
C
rectifier
D
oscillator
Answer :
oscillator
Many electronic devices require a source of energy at a specific frequency which may range from a few $$Hz$$ to several $$MHz.$$ This is achieved by an electronic device called an oscillator. An oscillator can produce waves from small $$\left( {20\,Hz} \right)$$ to extremely high frequencies $$\left( { > 100\,MHz} \right).$$
110.
The voltage gain of an amplifier with $$9\% $$ negative feedback is 10. The voltage gain without feedback will be