Semiconductors and Electronic Devices MCQ Questions & Answers in Modern Physics | Physics
Learn Semiconductors and Electronic Devices MCQ questions & answers in Modern Physics are available for students perparing for IIT-JEE, NEET, Engineering and Medical Enternace exam.
141.
The symbolic representation of four logic gates
The logic symbols for OR, NOT and NAND gates are respectively
A
(iii), (iv), (ii)
B
(iv), (i), (iii)
C
(iv), (ii), (i)
D
(i), (iii), (iv)
Answer :
(iv), (ii), (i)
The symbols given in problem are
(i) NAND
(ii) NOT
(iii) AND
(iv) OR
142.
In a full wave rectifier circuit operating from $$150\,Hz$$ mains frequency, the fundamental frequency in the ripple would be
A
$$25\,Hz$$
B
$$50\,Hz$$
C
$$70.7\,Hz$$
D
$$300\,Hz$$
Answer :
$$300\,Hz$$
Input frequency, $$f = 150\,Hz \Rightarrow T = \frac{1}{{150}}$$
For full wave rectifier, $${T_1} = \frac{T}{2} = \frac{1}{{300}}$$
$$ \Rightarrow {f_1} = 300\,Hz.$$
143.
The correct relationship between the two current gains $$\alpha $$ and $$\beta $$ in a transistor is
A
$$\beta = \frac{{1 + \alpha }}{\beta }$$
B
$$\alpha = \frac{\beta }{{1 + \beta }}$$
C
$$\alpha = \frac{\beta }{{1 - \beta }}$$
D
$$\beta = \frac{\alpha }{{1 + \alpha }}$$
Answer :
$$\alpha = \frac{\beta }{{1 + \beta }}$$
Current gain in common base configuration
$$\alpha = \frac{{\Delta {i_c}}}{{\Delta {i_e}}}$$
Current gain in common emitter configuration
$$\beta = \frac{{\Delta {i_c}}}{{\Delta {i_b}}}$$
And as we know that emitter current is equal to sum of base current and collector current
$$\eqalign{
& {\text{So,}}\,\,{i_e} = {i_b} + {i_c} \cr
& \Rightarrow \Delta {i_e} = \Delta {i_b} + \Delta {i_c} \cr
& \therefore \alpha = \frac{{\Delta {i_c}}}{{\Delta {i_b} + \Delta {i_c}}} \cr
& = \frac{{\frac{{\Delta {i_c}}}{{\Delta {i_b}}}}}{{1 + \frac{{\Delta {i_c}}}{{\Delta {i_b}}}}} = \frac{\beta }{{1 + \beta }} \cr
& {\text{or}}\,\,\alpha = \frac{\beta }{{\beta + 1}} \cr} $$
144.
Carbon, silicon and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by $${\left( {{E_g}} \right)_C},{\left( {{E_g}} \right)_{Si}}$$ and $${\left( {{E_g}} \right)_{Ge}}$$ respectively. Which one of the following relationships is true in their case ?
A
$${\left( {{E_g}} \right)_C} > {\left( {{E_g}} \right)_{Si}}$$
B
$${\left( {{E_g}} \right)_C} = {\left( {{E_g}} \right)_{Si}}$$
C
$${\left( {{E_g}} \right)_C} < {\left( {{E_g}} \right)_{Ge}}$$
D
$${\left( {{E_g}} \right)_C} < {\left( {{E_g}} \right)_{Si}}$$
For same value of current higher value of voltage is required for higher frequency hence (A) is correct answer.
146.
The part of a transistor which is most heavily doped to produce large number of majority carriers is
A
emmiter
B
base
C
collector
D
can be any of the above three.
Answer :
emmiter
Emitter sends the majority charge carrriers towards the collector. Therefore emitter is most heavily doped.
147.
To use a transistor as an amplifier
A
the emitter base junction is forward biased and the base collector junction is reversed biased
B
no bias voltage is required
C
both junctions are forward biased
D
both junctions are reverse biased
Answer :
the emitter base junction is forward biased and the base collector junction is reversed biased
A transistor raises the strength of a weak signal and thus acts as an amplifier. In order to achieve faithful amplification, the input circuit should always remain forward biased. To do so, a $$DC$$ voltage is applied in the input circuit in addition to the signal. This $$DC$$ voltage is known as bias voltage and its magnitude is such that it always keeps the input circuit forward biased regardless of the polarity of the signal.
The collector-base junction is reverse biased and has a very high resistance of the order of mega ohms.
148.
A signal of $$5\,kHz$$ frequency is amplitude modulated on a carrier wave of frequency $$2\,MHz.$$ The frequencies of the resultant signal is/are :
A
$$2005\,kHz,\,2000\,kHz$$ and $$1995\,kHz$$
B
$$2000\,kHz$$ and $$1995\,kHz$$
C
$$2\,MHz$$ only
D
$$2005\,kHz$$ and $$1995\,kHz$$
Answer :
$$2005\,kHz,\,2000\,kHz$$ and $$1995\,kHz$$
Amplitude modulated wave consists of three frequencies are $${\omega _c} + {\omega _m},\omega ,{\omega _c} - {\omega _m}$$
i.e. $$2005\,KHz,\,2000\,KHz,\,1995\,KHz$$
149.
When $$NPN$$ transistor is used as an amplifier
A
electrons move from base to emitter
B
holes move from emitter to base
C
electrons move from collector to base
D
holes move from base to emitter
Answer :
holes move from base to emitter
holes will diffuse from base to emitter
150.
Currents flowing in each of the circuits $$A$$ and $$B$$ respectively are
A
$$1\,A,2\,A$$
B
$$2\,A,1\,A$$
C
$$4\,A,2\,A$$
D
$$2\,A,4\,A$$
Answer :
$$4\,A,2\,A$$
In circuit $$A,$$ both the diodes are in forward bias and in parallel, so
$$R = 2\,\Omega $$
Current, $$i = \frac{V}{R} = \frac{8}{2} = 4\,A.$$
In circuit $$B,$$ only one diode is in forward bias,
so current, $$i = \frac{8}{4} = 2\,A.$$