Semiconductors and Electronic Devices MCQ Questions & Answers in Modern Physics | Physics

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141. The symbolic representation of four logic gates
Semiconductors and Electronic Devices mcq question image
The logic symbols for OR, NOT and NAND gates are respectively

A (iii), (iv), (ii)
B (iv), (i), (iii)
C (iv), (ii), (i)
D (i), (iii), (iv)
Answer :   (iv), (ii), (i)

142. In a full wave rectifier circuit operating from $$150\,Hz$$  mains frequency, the fundamental frequency in the ripple would be

A $$25\,Hz$$
B $$50\,Hz$$
C $$70.7\,Hz$$
D $$300\,Hz$$
Answer :   $$300\,Hz$$

143. The correct relationship between the two current gains $$\alpha $$ and $$\beta $$ in a transistor is

A $$\beta = \frac{{1 + \alpha }}{\beta }$$
B $$\alpha = \frac{\beta }{{1 + \beta }}$$
C $$\alpha = \frac{\beta }{{1 - \beta }}$$
D $$\beta = \frac{\alpha }{{1 + \alpha }}$$
Answer :   $$\alpha = \frac{\beta }{{1 + \beta }}$$

144. Carbon, silicon and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by $${\left( {{E_g}} \right)_C},{\left( {{E_g}} \right)_{Si}}$$   and $${\left( {{E_g}} \right)_{Ge}}$$  respectively. Which one of the following relationships is true in their case ?

A $${\left( {{E_g}} \right)_C} > {\left( {{E_g}} \right)_{Si}}$$
B $${\left( {{E_g}} \right)_C} = {\left( {{E_g}} \right)_{Si}}$$
C $${\left( {{E_g}} \right)_C} < {\left( {{E_g}} \right)_{Ge}}$$
D $${\left( {{E_g}} \right)_C} < {\left( {{E_g}} \right)_{Si}}$$
Answer :   $${\left( {{E_g}} \right)_C} > {\left( {{E_g}} \right)_{Si}}$$

145. The $$I-V$$ characteristic of an LED is

A Semiconductors and Electronic Devices mcq option image
B Semiconductors and Electronic Devices mcq option image
C Semiconductors and Electronic Devices mcq option image
D Semiconductors and Electronic Devices mcq option image
Answer :   Semiconductors and Electronic Devices mcq option image

146. The part of a transistor which is most heavily doped to produce large number of majority carriers is

A emmiter
B base
C collector
D can be any of the above three.
Answer :   emmiter

147. To use a transistor as an amplifier

A the emitter base junction is forward biased and the base collector junction is reversed biased
B no bias voltage is required
C both junctions are forward biased
D both junctions are reverse biased
Answer :   the emitter base junction is forward biased and the base collector junction is reversed biased

148. A signal of $$5\,kHz$$  frequency is amplitude modulated on a carrier wave of frequency $$2\,MHz.$$  The frequencies of the resultant signal is/are :

A $$2005\,kHz,\,2000\,kHz$$     and $$1995\,kHz$$
B $$2000\,kHz$$   and $$1995\,kHz$$
C $$2\,MHz$$   only
D $$2005\,kHz$$   and $$1995\,kHz$$
Answer :   $$2005\,kHz,\,2000\,kHz$$     and $$1995\,kHz$$

149. When $$NPN$$  transistor is used as an amplifier

A electrons move from base to emitter
B holes move from emitter to base
C electrons move from collector to base
D holes move from base to emitter
Answer :   holes move from base to emitter

150. Currents flowing in each of the circuits $$A$$ and $$B$$ respectively are
Semiconductors and Electronic Devices mcq question image

A $$1\,A,2\,A$$
B $$2\,A,1\,A$$
C $$4\,A,2\,A$$
D $$2\,A,4\,A$$
Answer :   $$4\,A,2\,A$$